发明申请
- 专利标题: THREE-DIMENSIONAL SEMICONDUCTOR DEVICE
- 专利标题(中): 三维半导体器件
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申请号: US14142158申请日: 2013-12-27
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公开(公告)号: US20140183756A1公开(公告)日: 2014-07-03
- 发明人: Sung-Min HWANG , Hansoo KIM , Woonkyung LEE , Wonseok CHO
- 申请人: Sung-Min HWANG , Hansoo KIM , Woonkyung LEE , Wonseok CHO
- 优先权: KR10-2013-0000289 20130102
- 主分类号: H01L23/498
- IPC分类号: H01L23/498
摘要:
A three-dimensional semiconductor device includes a substrate having a cell array region between first and second contact regions. A first stack includes a plurality of first electrodes vertically provided on the substrate, and a second stack includes a plurality of second electrodes vertically provided on the first stack. The second stack is arranged to expose end portions of the first electrodes on the first contact region and overlap end portions of the first electrodes on the second contact region.
公开/授权文献
- US09202570B2 Three-dimensional semiconductor device 公开/授权日:2015-12-01
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