Invention Application
- Patent Title: METHOD OF PATTERNING BLOCK COPOLYMER LAYER AND PATTERNED STRUCTURE
- Patent Title (中): 块状共聚物层和图案结构的方法
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Application No.: US14078921Application Date: 2013-11-13
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Publication No.: US20140193614A1Publication Date: 2014-07-10
- Inventor: Mi-Jeong KIM , In Taek HAN , June HUH , Seong-Jun Jeong , Haeng Deog KOH , Youn Jung PARK
- Applicant: Yonsei University, University - Industry Foundation(UIF) , SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Seoul KR Suwon-si
- Assignee: Yonsei University, University - Industry Foundation(UIF),SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: Yonsei University, University - Industry Foundation(UIF),SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Seoul KR Suwon-si
- Priority: KR10-2013-0002220 20130108
- Main IPC: G03F7/00
- IPC: G03F7/00

Abstract:
A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n ( n + 1 ) ] 1 3 ≤ r 1 - r 2 W ≤ 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n ( n - 1 ) ] 1 3 . Inequation 1
Public/Granted literature
- US09557639B2 Method of patterning block copolymer layer and patterned structure Public/Granted day:2017-01-31
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