发明申请
- 专利标题： Semiconductor Device and Fabricating Method Thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14161744申请日： 2014-01-23
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公开(公告)号： US20140203370A1公开(公告)日： 2014-07-24
- 发明人: Shigenobu Maeda , Tsukasa Matsuda , Hidenobu Fukutome
- 申请人： Shigenobu Maeda , Tsukasa Matsuda , Hidenobu Fukutome
- 优先权： KR10-2013-008118 20130124
- 主分类号： H01L29/78
- IPC分类号： H01L29/78
摘要：
A semiconductor device is provided. The semiconductor device includes a first fin on a substrate, a first gate electrode formed on the substrate to intersect the first fin, a first elevated source/drain on the first fin on both sides of the first gate electrode, and a first metal alloy layer on an upper surface and sidewall of the first elevated source/drain.
公开/授权文献
- US09276116B2 Semiconductor device and fabricating method thereof 公开/授权日：2016-03-01
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