发明申请
US20140203870A1 POWER MOSFETS WITH IMPROVED EFFICIENCY FOR MULTI-CHANNEL CLASS D AUDIO AMPLIFIERS AND PACKAGING THEREFOR
审中-公开
功率MOSFET具有提高多通道等级D音频放大器的效率和包装
- 专利标题: POWER MOSFETS WITH IMPROVED EFFICIENCY FOR MULTI-CHANNEL CLASS D AUDIO AMPLIFIERS AND PACKAGING THEREFOR
- 专利标题(中): 功率MOSFET具有提高多通道等级D音频放大器的效率和包装
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申请号: US14087555申请日: 2013-11-22
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公开(公告)号: US20140203870A1公开(公告)日: 2014-07-24
- 发明人: Richard K. Williams
- 申请人: Advanced Analogic Technologies Incorporated
- 申请人地址: US CA Santa Clara
- 专利权人: ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED
- 当前专利权人: ADVANCED ANALOGIC TECHNOLOGIES INCORPORATED
- 当前专利权人地址: US CA Santa Clara
- 主分类号: H03F3/217
- IPC分类号: H03F3/217 ; H03F3/185
摘要:
A stereo class-D audio system includes a first die including four monolithically integrated NMOS high-side devices and a second a second die including, four monolithically integrated PMOS low-side devices. The audio system also includes a set of electrical contacts for connecting the high and low-side devices to components within the a stereo class-D audio system, the set of electrical contacts including at least one supply contact for connecting the drains of the high-side devices to a supply voltage (Vcc) and at least one ground contact for connecting the drains of the low-side devices to ground, the electrical contacts also including respective contacts for each source of the high and low-side devices allowing the source of each high-side device to be connected to the source of a respective low-side device to form two H-bridge circuits.
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