Disclosed is a single-crystal ingot manufacturing apparatus, which includes a crucible in which a melt is accommodated, a heater configured to heat the crucible, a heat shield member configured to shield radiant heat from the heater and the melt, and a neck cover configured to encompass a seed crystal unit above the crucible with being introduced into an opening of the heat shield member, the radiant heat being not shielded in the opening, the neck cover being vertically moved in linkage to vertical movement of the seed crystal unit within a predetermined range.