发明申请
- 专利标题： Low-Resistivity p-Type GaSb Quantum Wells
- 专利标题（中）： 低电阻率p型GaSb量子阱
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申请号： US13895387申请日： 2013-05-16
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公开(公告)号： US20140217363A1公开(公告)日： 2014-08-07
- 发明人: Brian R. Bennett , Theresa F. Chick , Mario G. Ancona , John Bradley Boos
- 申请人： Brian R. Bennett , Theresa F. Chick , Mario G. Ancona , John Bradley Boos
- 申请人地址： US DC Washington
- 专利权人： The Government of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人： The Government of the United States of America, as represented by the Secretary of the Navy
- 当前专利权人地址： US DC Washington
- 主分类号： H01L29/06
- IPC分类号： H01L29/06
摘要：
A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In0.52Al0.48As on an InP substrate, where the In0.52Al0.48As is lattice matched to InP, followed by an AlAsxSb1-x buffer layer on the In0.52Al0.48As layer, an AlAsxSb1-x spacer layer on the AlAsxSb1-x buffer layer, a GaSb quantum well layer on the AlAsxSb1-x spacer layer, an AlAsxSb1-x barrier layer on the GaSb quantum well layer, an In0.2Al0.8Sb etch-stop layer on the AlAsxSb1-x barrier layer, and an InAs cap. The semiconductor device is suitable for use in low-power electronic devices such as field-effect transistors.
公开/授权文献
- US09006708B2 Low-resistivity p-type GaSb quantum wells 公开/授权日：2015-04-14
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