Invention Application
- Patent Title: APPARATI FOR FABRICATING THIN SEMICONDUCTOR BODIES FROM MOLTEN MATERIAL
- Patent Title (中): 用于从硬质材料制造薄半导体体的方法
-
Application No.: US14250581Application Date: 2014-04-11
-
Publication No.: US20140220171A1Publication Date: 2014-08-07
- Inventor: Emanuel M. Sachs , Richard L. Wallace , Eerik T. Hantsoo , Adam M. Lorenz , G.D. Stephen Hudelson , Ralf Jonczyk
- Applicant: 1366 TECHNOLOGIES, INC.
- Applicant Address: US MA Bedford
- Assignee: 1366 TECHNOLOGIES, INC.
- Current Assignee: 1366 TECHNOLOGIES, INC.
- Current Assignee Address: US MA Bedford
- Main IPC: B29C33/44
- IPC: B29C33/44

Abstract:
A pressure differential can be applied across a mold sheet and a semiconductor (e.g. silicon) wafer (e.g. for solar cell) is formed thereon. Relaxation of the pressure differential can allow release of the wafer. The mold sheet may be cooler than the melt. Heat is extracted through the thickness of the forming wafer. The temperature of the solidifying body is substantially uniform across its width, resulting in low stresses and dislocation density and higher crystallographic quality. The mold sheet can allow flow of gas through it. The melt can be introduced to the sheet by: full area contact with the top of a melt; traversing a partial area contact of melt with the mold sheet, whether horizontal or vertical, or in between; and by dipping the mold into a melt. The grain size can be controlled by many means.
Public/Granted literature
- US09643342B2 Apparati for fabricating thin semiconductor bodies from molten material Public/Granted day:2017-05-09
Information query