发明申请
- 专利标题： AlN CAP GROWN ON GaN/REO/SILICON SUBSTRATE STRUCTURE
- 专利标题（中）： GaN / REO /硅衬底结构上的AlN电极
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申请号： US13772169申请日： 2013-02-20
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公开(公告)号： US20140231818A1公开(公告)日： 2014-08-21
- 发明人: Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
- 申请人： Erdem Arkun , Michael Lebby , Andrew Clark , Rytis Dargis
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; H01L29/20
摘要：
III-N material grown on a silicon substrate includes a single crystal rare earth oxide layer positioned on a silicon substrate. The rare earth oxide is substantially crystal lattice matched to the surface of the silicon substrate. A first layer of III-N material is positioned on the surface of the rare earth oxide layer. An inter-layer of aluminum nitride (AlN) is positioned on the surface of the first layer of III-N material and an additional layer of III-N material is positioned on the surface of the inter-layer of aluminum nitride. The inter-layer of aluminum nitride and the additional layer of III-N material are repeated n-times to reduce or engineer strain in a final III-N layer. A cap layer of AlN is grown on the final III-N layer and a III-N layer of material with one of an LED structure and an HEMT structure is grown on the AlN cap layer.
公开/授权文献
- US08872308B2 AlN cap grown on GaN/REO/silicon substrate structure 公开/授权日：2014-10-28
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