发明申请
- 专利标题： SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING DEVICE
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14169213申请日： 2014-01-31
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公开(公告)号： US20140231995A1公开(公告)日： 2014-08-21
- 发明人: Yuichi ANDO , Yukito Sato , Katsunori Mae
- 申请人： Yuichi ANDO , Yukito Sato , Katsunori Mae
- 优先权： JP2013-032383 20130221; JP2014-004274 20140114
- 主分类号： H01L23/00
- IPC分类号： H01L23/00
摘要：
A device including a first substrate in which a functional element and an electrode are formed; a second substrate in which a through electrode is formed; a joining material that joins the first substrate and the second substrate while reserving a predetermined space between the functional element and the second substrate; and a conductive material that electrically connects the electrode to the through electrode. Here, the joining material is harder than the conductive material, and the joining material is electrically less conductive than the conductive material.
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