发明申请
US20140233153A1 METHODS FOR MANUFACTURE A CAPACITOR WITH THREE-DIMENSIONAL HIGH SURFACE AREA ELECTRODES
审中-公开
一种具有三维高表面电极的电容器的制造方法
- 专利标题: METHODS FOR MANUFACTURE A CAPACITOR WITH THREE-DIMENSIONAL HIGH SURFACE AREA ELECTRODES
- 专利标题(中): 一种具有三维高表面电极的电容器的制造方法
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申请号: US14033479申请日: 2013-09-22
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公开(公告)号: US20140233153A1公开(公告)日: 2014-08-21
- 发明人: LIANG CHAI , ALAN RAE , JAMES M. WILSON
- 申请人: LIANG CHAI , ALAN RAE , JAMES M. WILSON
- 主分类号: H01G4/008
- IPC分类号: H01G4/008 ; H01G4/12
摘要:
A capacitor, and methods of its manufacture, having improved capacitance efficiency which results from increasing the effective area of an electrode surface are disclosed. An improved “three-dimensional” capacitor may be constructed with electrode layers having three-dimensional aspects at the point of interface with a dielectric such that portions of the electrode extend into the dielectric layer. Advantageously, embodiments of a three-dimensional capacitor drastically reduce the space footprint that is required in a circuit to accommodate the capacitor, when compared to current capacitor designs. Increased capacitance density may be realized without using high k (high constant) dielectric materials, additional “electrode—dielectric—electrode” arrangements in an ever increasing stack, or serially stringing together multiple capacitors.
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