Provided is a thin film transistor on fiber and a method of manufacturing the same. The thin film transistor includes a fiber; a first electrode, a second electrode and a gate electrode formed on fiber; a channel formed between the first and second electrodes; an encapsulant encapsulating the fiber, the first, second, and gate electrodes, and an upper surface of the channel; and a gate insulating layer formed in a portion of the inner area of the encapsulant.