发明申请
- 专利标题： IMPLANTATION OF GASEOUS CHEMICALS INTO CAVITIES FORMED IN INTERMEDIATE DIELECTRICS LAYERS FOR SUBSEQUENT THERMAL DIFFUSION RELEASE
- 专利标题（中）： 将气体化学物质纳入用于后续热扩散释放的中间电介质层中的CAVI
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申请号： US14352057申请日： 2012-04-19
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公开(公告)号： US20140246740A1公开(公告)日： 2014-09-04
- 发明人: Willibrordus Gerardus Van Den Hoek , Robertus Petrus Van Kampen , Richard L. Knipe , Charles Gordon Smith
- 申请人： Willibrordus Gerardus Van Den Hoek , Robertus Petrus Van Kampen , Richard L. Knipe , Charles Gordon Smith
- 专利权人： CAVENDISH KINETICS, INC. a Corporation
- 当前专利权人： CAVENDISH KINETICS, INC. a Corporation
- 国际申请： PCT/US2012/034210 WO 20120419
- 主分类号： B81B3/00
- IPC分类号： B81B3/00 ; B81B7/00 ; B81C1/00
摘要：
The present invention generally relates to methods for increasing the lifetime of MEMS devices by reducing the landing velocity on switching by introducing gas into the cavity surrounding the switching element of the MEMS device. The gas is introduced using ion implantation into a cavity close to the cavity housing the switching element and connected to that cavity by a channel through which the gas can flow from one cavity to the other. The implantation energy is chosen to implant many of the atoms close to the inside roof and floor of the cavity so that on annealing those atoms diffuse into the cavity. The gas provides gas damping which reduces the kinetic energy of the switching MEMS device which then should have a longer lifetime.
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