Invention Application
- Patent Title: MEMORY ARRAYS AND METHODS OF FORMING THE SAME
- Patent Title (中): 存储器阵列及其形成方法
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Application No.: US14252145Application Date: 2014-04-14
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Publication No.: US20140252300A1Publication Date: 2014-09-11
- Inventor: Roberto Somaschini , Fabio Pellizzer , Carmela Cupeta , Nicola Nastasi
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a conductive material in a number of vias and on a substrate structure, the conductive material to serve as a number of conductive lines of the array and coupling the number of conductive lines to the array circuitry.
Public/Granted literature
- US09172037B2 Combined conductive plug/conductive line memory arrays and methods of forming the same Public/Granted day:2015-10-27
Information query
IPC分类:
