发明申请
- 专利标题: DEPLETION MOSFET DRIVER
- 专利标题(中): DEPLETION MOSFET驱动器
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申请号: US13928250申请日: 2013-06-26
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公开(公告)号: US20140266321A1公开(公告)日: 2014-09-18
- 发明人: Mark Telefus
- 申请人: Flextronics AP, LLC
- 专利权人: Flextronics AP, LLC
- 当前专利权人: Flextronics AP, LLC
- 主分类号: H03K17/00
- IPC分类号: H03K17/00
摘要:
A driver circuit is configured using a depletion-mode MOSFET to supply an output voltage across an output capacitor. The driver circuit includes a resistor positioned between two terminals of the MOSFET. In the case of an n-channel depletion-mode MOSFET, the resistor is coupled to the source and the gate. The circuit is a current controlled depletion driver that turns OFF the depletion-mode MOSFET by driving a reverse current through the resistor to establish a negative potential at the gate relative to the source. A Zener diode is coupled between the source of the depletion-mode MOSFET and the output capacitor to establish a voltage differential between the output and the MOSFET source.
公开/授权文献
- US09806553B2 Depletion MOSFET driver 公开/授权日:2017-10-31
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