发明申请
US20140273336A1 Method of Forming Cu(InxGa1-x)S2 and Cu(InxGa1-x)Se2 Nanoparticles
有权
形成Cu（In x Ga 1-x）S2和Cu（In x Ga 1-x）Se 2纳米颗粒的方法
- 专利标题： Method of Forming Cu(InxGa1-x)S2 and Cu(InxGa1-x)Se2 Nanoparticles
- 专利标题（中）： 形成Cu（In x Ga 1-x）S2和Cu（In x Ga 1-x）Se 2纳米颗粒的方法
-
申请号： US14191486申请日： 2014-02-27
-
公开(公告)号： US20140273336A1公开(公告)日： 2014-09-18
- 发明人: Colin C. Baker , Woohong Kim , Shyam S. Bayya , Jasbinder S. Sanghera , Ishwar D. Aggarwal
- 申请人： Colin C. Baker , Woohong Kim , Shyam S. Bayya , Jasbinder S. Sanghera , Ishwar D. Aggarwal
- 主分类号： H01L31/18
- IPC分类号： H01L31/18 ; H01L31/032
摘要：
A method for synthesizing Cu(InxGa1-x)S2 and Cu(InxGa1-x)Se2 nanopowders using flame spray pyrolysis to form solar cell absorber materials. The flame spray product is the oxide nanoparticles of the absorber materials (copper indium gallium oxide). The oxide nanoparticles may be deposited directly onto glass substrates. The oxide nanoparticles are then sulfurdized or selenized with a post deposition anneal directly on the substrate to form the absorber layer for a solar cell device.
公开/授权文献
信息查询
IPC分类:
