发明申请
- 专利标题: SENSE AMPLIFIER CIRCUIT AND SEMICONDUCTOR DEVICE
- 专利标题(中): SENSE放大器电路和半导体器件
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申请号: US14306293申请日: 2014-06-17
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公开(公告)号: US20140293721A1公开(公告)日: 2014-10-02
- 发明人: Kazuhiko KAJIGAYA , Soichiro YOSHIDA , Yasutoshi YAMADA
- 申请人: Kazuhiko KAJIGAYA , Soichiro YOSHIDA , Yasutoshi YAMADA
- 申请人地址: LU Luxembourg
- 专利权人: PS4 Luxco S.a.r.l.
- 当前专利权人: PS4 Luxco S.a.r.l.
- 当前专利权人地址: LU Luxembourg
- 优先权: JP2009-215045 20090916
- 主分类号: G11C11/4091
- IPC分类号: G11C11/4091
摘要:
A single-ended sense amplifier circuit of the invention comprises first and second MOS transistors and first and second precharge circuits. The first MOS transistor drives the bit line to a predetermined voltage and switches connection between the bit line and a sense node and the second MOS transistor whose gate is connected to the sense node amplifies the signal via the first MOS transistor. The first precharge circuit precharges the bit line to a first potential and the second precharge circuit precharges the sense node to a second potential. Before sensing operation, the bit line is driven to the predetermined voltage when the above gate voltage is controlled to decrease. The predetermined voltage is appropriately set so that a required voltage difference at the sense node between high and low levels can be obtained near a changing point between charge transfer/distributing modes.
公开/授权文献
- US08988958B2 Sense amplifier circuit and semiconductor device 公开/授权日:2015-03-24
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