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Invention Application
US20140308820A1 METHOD OF DEPOSITING SILICON OXIDE FILM AND SILICON NITRIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
沉积氧化硅膜和硅酸盐膜的方法及制造半导体器件的方法

  • Patent Title: METHOD OF DEPOSITING SILICON OXIDE FILM AND SILICON NITRIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
  • Patent Title (中): 沉积氧化硅膜和硅酸盐膜的方法及制造半导体器件的方法
  • Application No.: US14315604
    Application Date: 2014-06-26
  • Publication No.: US20140308820A1
    Publication Date: 2014-10-16
  • Inventor: Atsushi ENDO , Masaki KUROKAWA , Hiroki IRIUDA
  • Applicant: TOKYO ELECTRON LIMITED
  • Priority: JP2011-076461 20110330
  • Main IPC: H01L21/02
  • IPC: H01L21/02 ;  H01L23/00
METHOD OF DEPOSITING SILICON OXIDE FILM AND SILICON NITRIDE FILM AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Abstract:
A method of depositing a silicon oxide film and a silicon nitride film includes depositing the silicon oxide film and the silicon nitride film on a substrate, and a gas for forming the silicon nitride film further includes boron.
Abstract(Chinese):

沉积氧化硅膜和氮化硅膜的方法包括在衬底上沉积氧化硅膜和氮化硅膜，并且用于形成氮化硅膜的气体还包括硼。

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