METHODS FOR MODELING OF FINFET WIDTH QUANTIZATION

Invention Application

US20140310676A1 METHODS FOR MODELING OF FINFET WIDTH QUANTIZATION 有权

Title translation: FINFET宽度量化建模方法

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Patent Title: METHODS FOR MODELING OF FINFET WIDTH QUANTIZATION
Patent Title (中): FINFET宽度量化建模方法
Application No.: US14317013

Application Date: 2014-06-27
Publication No.: US20140310676A1

Publication Date: 2014-10-16
Inventor: Wilfried Ernest-August Haensch , Chung-Hsun Lin , Philip J. Oldiges , Hailing Wang , Richard Q. Williams
Applicant: International Business Machines Corporation
Main IPC: G06F17/50
IPC: G06F17/50

METHODS FOR MODELING OF FINFET WIDTH QUANTIZATION

Abstract:

A method for modeling FinFET width quantization is described. The method includes fitting a FinFET model of a FinFET device to single fin current/voltage characteristics. The FinFET device comprises a plurality of fins The method includes obtaining statistical data of at least one sample FinFET device. The statistical data includes DIBL data and SS data. The method also includes fitting the FinFET model to a variation in a current to turn off the finFETs device (IOFF) in the statistical data using the DIBL data and the SS data and determining a model for a voltage to turn off the finFETs device (VOFF). The method also includes fitting the FinFET model to the VOFF.

Abstract(Chinese):

描述了一种用于对FinFET宽度量化进行建模的方法。该方法包括将FinFET器件的FinFET模型拟合到单个鳍电流/电压特性。 FinFET器件包括多个鳍片。该方法包括获得至少一个样本FinFET器件的统计数据。统计数据包括DIBL数据和SS数据。该方法还包括使用DIBL数据和SS数据将FinFET模型拟合到电流变化以关闭统计数据中的finFET器件（IOFF），并且确定用于关断finFET器件（VOFF）的电压模型）。该方法还包括将FinFET模型拟合到VOFF。

Public/Granted literature

US09058441B2 Methods for modeling of FinFET width quantization Public/Granted day:2015-06-16

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