发明申请
- 专利标题： Carbon Layers for High Temperature Processes
- 专利标题（中）： 高温工艺碳层
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申请号： US13892003申请日： 2013-05-10
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公开(公告)号： US20140335700A1公开(公告)日： 2014-11-13
- 发明人: Guenter Denifl , Markus Kahn , Helmut Schoenherr , Daniel Maurer , Thomas Grille , Joachim Hirschler , Ursula Hedenig , Roland Moennich , Matthias Kuenle
- 申请人： Infineon Technologies AG
- 主分类号： H01L21/02
- IPC分类号： H01L21/02 ; C23C16/26
摘要：
Carbon layers with reduced hydrogen content may be deposited by plasma-enhanced chemical vapor deposition by selecting processing parameters accordingly. Such carbon layers may be subjected to high temperature processing without showing excessive shrinking.