Invention Application
- Patent Title: SEMICONDUCTOR DEVICE
- Patent Title (中): 半导体器件
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Application No.: US14456275Application Date: 2014-08-11
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Publication No.: US20140347777A1Publication Date: 2014-11-27
- Inventor: Koichiro KAMATA
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2010-019183 20100129
- Main IPC: H02H9/04
- IPC: H02H9/04 ; H01L27/02

Abstract:
To prevent damage on an element even when a voltage high enough to break the element is input. A semiconductor device of the invention operates with a first voltage and includes a protection circuit which changes the value of the first voltage when the absolute value of the first voltage is higher than a reference value. The protection circuit includes: a control signal generation circuit generating a second voltage based on the first voltage and outputting the generated second voltage; and a voltage control circuit. The voltage control circuit includes a transistor which has a source, a drain, and a gate, and which is turned on or off depending on the second voltage input to the gate and thus controls whether the value of the first voltage is changed based on the amount of current flowing between the source and the drain. The transistor also includes an oxide semiconductor layer.
Public/Granted literature
- US08981518B2 Semiconductor device Public/Granted day:2015-03-17
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