Invention Application
US20140349085A1 METHOD OF FABRICATING 3D NANOSTRUCTURED METAL OXIDES USING PROXIMITY-FIELD NANOPATTERNING AND ATOMIC LAYER DEPOSITION
审中-公开
使用近场纳米管和原子层沉积制备三维纳米结构金属氧化物的方法
- Patent Title: METHOD OF FABRICATING 3D NANOSTRUCTURED METAL OXIDES USING PROXIMITY-FIELD NANOPATTERNING AND ATOMIC LAYER DEPOSITION
- Patent Title (中): 使用近场纳米管和原子层沉积制备三维纳米结构金属氧化物的方法
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Application No.: US14097971Application Date: 2013-12-05
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Publication No.: US20140349085A1Publication Date: 2014-11-27
- Inventor: SeokWoo Jeon , ChangUi Ahn
- Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Daejeon
- Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Daejeon
- Priority: KR10-2013-0058212 20130523
- Main IPC: B29C63/00
- IPC: B29C63/00
Abstract:
The present invention is 3D nanostructured porous metal oxide and the method of fabricating said metal oxide, wherein said method is comprising the steps of: (a) spin-coating with photoresist onto substrate; (b) forming periodic 3D porous nanostructure patterned pore in said photoresist using proximity-field nanopatterning; (c) impregnating metal oxide into said 3D pore of photoresist having said periodic 3D pore pattern as template via atomic layered deposition (ALD) with metal precursor; and (d) obtaining 3D nanostructured porous metal oxide having the inverse shape of said template by removing said photoresist template.
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