发明申请
- 专利标题： SEMICONDUCTOR DEVICES INCLUDING PROTRUDING INSULATION PORTIONS BETWEEN ACTIVE FINS
-
申请号： US14463394申请日： 2014-08-19
-
公开(公告)号： US20140353769A1公开(公告)日： 2014-12-04
- 发明人: Shigenobu Maeda , Hee-Soo Kang , Sang-Pil Sim , Soo-Hun Hong
- 申请人： Shigenobu Maeda , Hee-Soo Kang , Sang-Pil Sim , Soo-Hun Hong
- 优先权： KR10-2012-0138132 20121130
- 主分类号： H01L29/10
- IPC分类号： H01L29/10 ; H01L27/088 ; H01L29/78
摘要：
A semiconductor device can include a field insulation layer including a planar major surface extending in first and second orthogonal directions and a protruding portion that protrudes a particular distance from the major surface relative to the first and second orthogonal directions. First and second multi-channel active fins can extend on the field insulation layer, and can be separated from one another by the protruding portion. A conductive layer can extend from an uppermost surface of the protruding portion to cross over the protruding portion between the first and second multi-channel active fins.
公开/授权文献
信息查询
IPC分类:
