发明申请
- 专利标题: SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- 专利标题(中): 半导体器件及其制造方法
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申请号: US13973114申请日: 2013-08-22
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公开(公告)号: US20140353837A1公开(公告)日: 2014-12-04
- 发明人: Takashi WATANABE
- 申请人: Kabushiki Kaisha Toshiba
- 申请人地址: JP Minato-ku
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JP Minato-ku
- 主分类号: H01L23/485
- IPC分类号: H01L23/485 ; H01L23/48 ; H01L21/768
摘要:
A semiconductor device according to the present embodiment includes an insulating film provided above a semiconductor substrate. A plurality of upper-layer wirings are provided on the insulating film. A plurality of lower-layer wirings are provided in the insulating film. The lower-layer wirings are respectively located between the upper-layer wirings adjacent to each other when viewed from above the semiconductor substrate. Side surfaces of the lower-layer wirings substantially match surfaces of the upper-layer wirings present on both sides of the lower-layer wirings, respectively when viewed from above the semiconductor substrate.
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