发明申请
- 专利标题： Method of Inspecting Misalignment of Polysilicon Gate
- 专利标题（中）： 检查多晶硅门偏移的方法
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申请号： US14142584申请日： 2013-12-27
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公开(公告)号： US20150004723A1公开(公告)日： 2015-01-01
- 发明人: Rongwei FAN , Hunglin CHEN , Yin LONG , Qiliang NI
- 申请人： SHANGHAI HUALI MICROELECTRONICS CORPORATION
- 申请人地址： CN Shanghai
- 专利权人： SHANGHAI HUALI MICROELECTRONICS CORPORATION
- 当前专利权人： SHANGHAI HUALI MICROELECTRONICS CORPORATION
- 当前专利权人地址： CN Shanghai
- 优先权： CN201310262927.8 20130627
- 主分类号： H01L21/66
- IPC分类号： H01L21/66
摘要：
A method of inspecting misalignment of a polysilicon gate is disclosed, characterized in forming only NMOS devices in P-wells in a test wafer and utilizing an advanced electron beam inspection tool operating with a positive mode to carry out electrical defect inspection. The method can be applied in precisely figuring out the in-plane misalignment of the polysilicon gates of an in-process semiconductor product and identifying a misalignment tendency therebetween across a wafer by verifying all locations of interest thereon, thus providing a methodology for process window optimization and on-line monitoring and contributing to the manufacturing process and yield improvement.
公开/授权文献
- US08987013B2 Method of inspecting misalignment of polysilicon gate 公开/授权日：2015-03-24
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