Invention Application
- Patent Title: OPTIMIZING fuseROM USAGE FOR MEMORY REPAIR
- Patent Title (中): 优化fuseROM用于存储器维修
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Application No.: US14038306Application Date: 2013-09-26
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Publication No.: US20150012786A1Publication Date: 2015-01-08
- Inventor: Devanathan Varadarajan , Harsharaj Ellur
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Priority: IN528/CHE/2013 20130702
- Main IPC: G11C29/12
- IPC: G11C29/12

Abstract:
A memory repair system in an integrated circuit (IC) that optimizes the fuseROM used for memory repair. The IC includes a plurality of memory wrappers. Each memory wrapper includes a memory block with a fuse register and a bypass register. The bypass register have a bypass data that indicates a defective memory wrapper of the plurality of memory wrappers. A fuseROM controller is coupled to the plurality of memory wrappers. A memory bypass chain links the bypass registers in the plurality of memory wrappers with the fuseROM controller. The fuseROM controller loads the bypass data in the memory bypass chain. A memory data chain links the fuse registers in the plurality of memory wrappers with the fuseROM controller. The memory data chain is re-configured to link the fuse registers in a set of defective memory wrappers of the plurality of memory wrappers responsive to the bypass data loaded in the memory bypass chain.
Public/Granted literature
- US09053799B2 Optimizing fuseROM usage for memory repair Public/Granted day:2015-06-09
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