A semiconductor device comprising dual L-shaped drift regions in a lateral diffused metal oxide semiconductor (LDMOS) and a method of making the same. The LDMOS in the semiconductor device comprises a trench isolation region or a deep trench encapsulated by a liner, a first L-shaped drift region, and a second L-shaped drift region. The LDMOS comprising the dual L-shape drift regions is integrated with silicon-germanium (SiGe) technology. The LDMOS comprising the dual L-shape drift regions furnishes a much higher voltage drop in a lateral direction within a much shorter distance from a drain region than the traditional LDMOS does.