FINFET INTEGRATED CIRCUITS AND METHODS FOR THEIR FABRICATION

Invention Application

US20150014776A1 FINFET INTEGRATED CIRCUITS AND METHODS FOR THEIR FABRICATION 有权

Title translation: FINFET集成电路及其制造方法

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Patent Title: FINFET INTEGRATED CIRCUITS AND METHODS FOR THEIR FABRICATION
Patent Title (中): FINFET集成电路及其制造方法
Application No.: US13937939

Application Date: 2013-07-09
Publication No.: US20150014776A1

Publication Date: 2015-01-15
Inventor: Murat Kerem Akarvardar , Xiuyu Cai , Ajey Poovannummoottil Jacob
Applicant: GLOBALFOUNDRIES, Inc.
Applicant Address: KY Grand Cayman
Assignee: GLOBALFOUNDRIES, Inc.
Current Assignee: GLOBALFOUNDRIES, Inc.
Current Assignee Address: KY Grand Cayman
Main IPC: H01L21/8234
IPC: H01L21/8234 ; H01L29/78 ; H01L27/088 ; H01L29/66

FINFET INTEGRATED CIRCUITS AND METHODS FOR THEIR FABRICATION

Abstract:

A fin field effect transistor integrated circuit (FinFET IC) has a plurality of fins extending from a semiconductor substrate, where a trough is defined between adjacent fins. A second dielectric is positioned within the trough, and a protruding portion of the fins extends above the second dielectric. A first dielectric is positioned between the fin sidewalls and the second dielectric.

Abstract(Chinese):

翅片场效应晶体管集成电路（FinFET IC）具有从半导体衬底延伸的多个鳍，其中在相邻鳍之间限定有槽。第二电介质位于槽内，并且翅片的突出部分在第二电介质上方延伸。第一电介质位于翅片侧壁和第二电介质之间。

Public/Granted literature

US08987094B2 FinFET integrated circuits and methods for their fabrication Public/Granted day:2015-03-24

Information query

Global Dossier Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺