发明申请
- 专利标题： SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME
- 专利标题（中）： 半导体器件及其形成方法
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申请号： US14269748申请日： 2014-05-05
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公开(公告)号： US20150017768A1公开(公告)日： 2015-01-15
- 发明人: Clement Hsingjen Wann , Chih-Hao Chang , Shou Zen Chang , Chih-Hsin Ko , Yasutoshi Okuno , Andrew Joseph Kelly
- 申请人： Taiwan Semiconductor Manufacturing Company Ltd.
- 主分类号： H01L21/8238
- IPC分类号： H01L21/8238 ; H01L29/66
摘要：
A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a semiconductor substrate including an active region including a plurality of device regions. The semiconductor device further includes a first device disposed in a first device region of the plurality of device regions, the first device including a first gate structure, first gate spacers disposed on sidewalls of the first gate structure, and first source and drain features. The semiconductor device further includes a second device disposed in a second device region of the plurality of device regions, the second device including a second gate structure, second gate spacers disposed on sidewalls of the second gate structure, and second source and drain features. The second and first source and drain features having a source and drain feature and a contact feature in common. The common contact feature being a self-aligned contact.
公开/授权文献
- US09373549B2 Semiconductor device and method of forming the same 公开/授权日：2016-06-21
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