Invention Application
US20150017788A1 METHOD FOR MAKING SILICON-GERMANIUM ABSORBERS FOR THERMAL SENSORS
审中-公开
用于制造用于热传感器的硅 - 锗吸收器的方法
- Patent Title: METHOD FOR MAKING SILICON-GERMANIUM ABSORBERS FOR THERMAL SENSORS
- Patent Title (中): 用于制造用于热传感器的硅 - 锗吸收器的方法
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Application No.: US14327715Application Date: 2014-07-10
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Publication No.: US20150017788A1Publication Date: 2015-01-15
- Inventor: Vu A. Vu
- Applicant: BAE Systems Information And Electronic Systems Integration Inc.
- Main IPC: H01L21/02
- IPC: H01L21/02
Abstract:
A system and method for growing polycrystalline silicon-germanium film that includes mixing a GeH4 gas and a SiH4 gas to coat and grow polycrystalline silicon-germanium film on a silicon wafer. The GeH4 gas and the SiH4 gas are also heated and the pressure around the wafer is reduced to at least 2.5*10−3 mBar to produce the polycrystalline silicon-germanium film. The polycrystalline silicon-germanium film is then annealed to improve its resistivity.
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