发明申请
US20150024565A1 METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING EMBEDDED STRAIN-INDUCING PATTERN
有权
形成具有嵌入式应变诱导图案的半导体器件的方法
- 专利标题： METHOD OF FORMING SEMICONDUCTOR DEVICE HAVING EMBEDDED STRAIN-INDUCING PATTERN
- 专利标题（中）： 形成具有嵌入式应变诱导图案的半导体器件的方法
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申请号： US14508250申请日： 2014-10-07
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公开(公告)号： US20150024565A1公开(公告)日： 2015-01-22
- 发明人: Shigenobu Maeda , Hidenobu Fukutome , Young-Gun Ko , Joo-Hyun Jeong
- 申请人： Shigenobu Maeda , Hidenobu Fukutome , Young-Gun Ko , Joo-Hyun Jeong
- 优先权： KR10-2012-0067999 20120625
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/02
摘要：
A semiconductor device can include an active region having a fin portion providing a channel region between opposing source and drain regions. A gate electrode can cross over the channel region between the opposing source and drain regions and first and second strain inducing structures can be on opposing sides of the gate electrode and can be configured to induce strain on the channel region, where each of the first and second strain inducing structures including a respective facing side having a pair of {111} crystallographically oriented facets.