Invention Application
US20150084129A1 DUMMY CELL ARRAY FOR FIN FIELD-EFFECT TRANSISTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE DUMMY CELL ARRAY
有权
用于熔融场效应晶体管器件和半导体集成电路的DUMMY CELL阵列,包括DUMMY CELL ARRAY
- Patent Title: DUMMY CELL ARRAY FOR FIN FIELD-EFFECT TRANSISTOR DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT INCLUDING THE DUMMY CELL ARRAY
- Patent Title (中): 用于熔融场效应晶体管器件和半导体集成电路的DUMMY CELL阵列,包括DUMMY CELL ARRAY
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Application No.: US14487702Application Date: 2014-09-16
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Publication No.: US20150084129A1Publication Date: 2015-03-26
- Inventor: Ji-Myoung LEE , Young-Soo SONG , Jun-Min LEE , Bo-Young LEE
- Applicant: Samsung Electronics Co., Ltd.
- Priority: KR10-2013-0114684 20130926
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L27/12 ; H01L27/088

Abstract:
A semiconductor device includes a substrate; a device area of the substrate, the device area including a plurality of device unit cells; and a dummy cell array arranged around the device area. The dummy cell array includes a plurality of dummy unit cells repeatedly arranged in a first direction and a second direction perpendicular to the first direction, each of the dummy cell unit having a structure corresponding to a device unit cell. The device unit cell includes at least a first transistor in the device area. The structure of the dummy unit cell includes an active area and a gate line. For each dummy unit cell, the active area and the gate line extend beyond a cell boundary that defines the dummy unit cell.
Public/Granted literature
Information query
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