发明申请
- 专利标题: ESTIMATION OF LEVEL-THRESHOLDS FOR MEMORY CELLS
- 专利标题(中): 记忆细胞水平阈值的估计
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申请号: US14489983申请日: 2014-09-18
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公开(公告)号: US20150085591A1公开(公告)日: 2015-03-26
- 发明人: Thomans Mittelholzer , Nikolaos Papandreou , Haris Pozidis
- 申请人: Thomans Mittelholzer , Nikolaos Papandreou , Haris Pozidis
- 优先权: GBGB1317081.6 20130923
- 主分类号: G11C29/02
- IPC分类号: G11C29/02
摘要:
Methods and apparatus are provided for determining level-thresholds for q-level memory cells. A plurality of the memory cells are read to obtain respective read signal components. The read signal components are processed in dependence on signal level to produce a signal level vector, comprising a series of elements, indicative of the distribution of read signal components in order of signal level. The signal level vector is scanned with a sliding window of length greater than the spacing of successive window positions in the scan. At each window position, a metric Mi is calculated in dependence on the elements of the signal level vector in the window. A level-threshold for successive memory cell levels is then determined in dependence on variation of the metric over the scan.
公开/授权文献
- US09928923B2 Estimation of level-thresholds for memory cells 公开/授权日:2018-03-27
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