发明申请
US20150085591A1 ESTIMATION OF LEVEL-THRESHOLDS FOR MEMORY CELLS 有权
记忆细胞水平阈值的估计

ESTIMATION OF LEVEL-THRESHOLDS FOR MEMORY CELLS
摘要:
Methods and apparatus are provided for determining level-thresholds for q-level memory cells. A plurality of the memory cells are read to obtain respective read signal components. The read signal components are processed in dependence on signal level to produce a signal level vector, comprising a series of elements, indicative of the distribution of read signal components in order of signal level. The signal level vector is scanned with a sliding window of length greater than the spacing of successive window positions in the scan. At each window position, a metric Mi is calculated in dependence on the elements of the signal level vector in the window. A level-threshold for successive memory cell levels is then determined in dependence on variation of the metric over the scan.
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