Invention Application
- Patent Title: ETCHANT COMPOSITION AND METHODS OF FABRICATING METAL WIRING AND THIN FILM TRANSISTOR SUBSTRATE USING THE SAME
- Patent Title (中): 使用其制造金属接线和薄膜晶体管基板的蚀刻组合物和方法
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Application No.: US14263956Application Date: 2014-04-28
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Publication No.: US20150087148A1Publication Date: 2015-03-26
- Inventor: In-Bae Kim , Jong-Hyun Choung , Youngmin Moon , Hongsick Park , Gyu-po Kim , Won-guk Seo , Hyun-cheol Shin , Ki-beom Lee , Sam-young Cho , Seung-yeon Han
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-City
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin-City
- Priority: KR10-2013-0113420 20130924
- Main IPC: H01L21/306
- IPC: H01L21/306 ; C23F1/18

Abstract:
An etchant composition including 0.5 wt % to 20 wt % of a persulfate, 0.01 wt % to 1 wt % of a fluorine compound, 1 wt % to 10 wt % of an inorganic acid, 0.01 wt % to 2 wt % of an azole-based compound, 0.1 wt % to 5 wt % of a chlorine compound, 0.05 wt % to 3 wt % of a copper salt, 0.01 wt % to 5 wt % of an antioxidant or a salt thereof, based on a total weight of the etchant composition, and water in an amount sufficient for the total weight of the etchant composition to be equal to 100 wt % is disclosed. The etchant composition is suitable for use in forming a metal wiring by etching a metal layer including copper or in fabricating a thin film transistor substrate for a display apparatus.
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