Invention Application
US20150091057A1 SEMICONDUCTOR STRUCTURE AND DEVICE AND METHODS OF FORMING SAME USING SELECTIVE EPITAXIAL PROCESS
有权
半导体结构和器件及其使用选择性外延工艺形成的方法
- Patent Title: SEMICONDUCTOR STRUCTURE AND DEVICE AND METHODS OF FORMING SAME USING SELECTIVE EPITAXIAL PROCESS
- Patent Title (中): 半导体结构和器件及其使用选择性外延工艺形成的方法
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Application No.: US14040196Application Date: 2013-09-27
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Publication No.: US20150091057A1Publication Date: 2015-04-02
- Inventor: Qi Xie , Vladimir Machkaoutsan , Jan Willem Maes
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8238
Abstract:
Semiconductor structures, devices, and methods of forming the structures and device are disclosed. Exemplary structures include multi-gate or FinFET structures that can include both re-channel MOS (NMOS) and p-channel MOS (PMOS) devices to form CMOS structures and devices on a substrate. The devices can be formed using selective epitaxy and shallow trench isolation techniques.
Public/Granted literature
- US09240412B2 Semiconductor structure and device and methods of forming same using selective epitaxial process Public/Granted day:2016-01-19
Information query
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