发明申请
- 专利标题： HYBRID PHASE FIELD EFFECT TRANSISTOR
- 专利标题（中）： 混合相位效应晶体管
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申请号： US14040574申请日： 2013-09-27
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公开(公告)号： US20150091067A1公开(公告)日： 2015-04-02
- 发明人: Ravi Pillarisetty , Brian S. Doyle , Elijah V. Karpov , David L. Kencke , Uday Shah , Charles C. Kuo , Robert S. Chau
- 申请人： Ravi Pillarisetty , Brian S. Doyle , Elijah V. Karpov , David L. Kencke , Uday Shah , Charles C. Kuo , Robert S. Chau
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/66
摘要：
An insulating layer is deposited over a transistor structure. The transistor structure comprises a gate electrode over a device layer on a substrate. The transistor structure comprises a first contact region and a second contact region on the device layer at opposite sides of the gate electrode. A trench is formed in the first insulating layer over the first contact region. A metal-insulator phase transition material layer with a S-shaped IV characteristic is deposited in the trench or in the via of the metallization layer above on the source side.
公开/授权文献
- US09455343B2 Hybrid phase field effect transistor 公开/授权日：2016-09-27
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