发明申请
- 专利标题： Methods of Fabricating Semiconductor Devices
- 专利标题（中）： 制造半导体器件的方法
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申请号： US14299495申请日： 2014-06-09
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公开(公告)号： US20150093897A1公开(公告)日： 2015-04-02
- 发明人: Cha-Won Koh , Hyun-Woo Kim , Jeon-ll Lee , Hyo-Sung Lee
- 申请人： Cha-Won Koh , Hyun-Woo Kim , Jeon-ll Lee , Hyo-Sung Lee
- 优先权： KR10-2013-0117885 20131002
- 主分类号： H01L27/112
- IPC分类号： H01L27/112 ; H01L21/283 ; H01L21/3065
摘要：
Semiconductor devices and methods of fabricating the same are provided. The methods include preparing a template having a three dimensional (3D) stair type structure formed in intaglio, forming an imprint pattern having the stair type structure using the template, and simultaneously forming stair type patterns on a substrate using the imprint pattern.
公开/授权文献
- US09147687B2 Methods of fabricating semiconductor devices 公开/授权日：2015-09-29
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