发明申请
- 专利标题: PROTECTION CIRCUIT AND A GATE DRIVING CIRCUITRY
- 专利标题(中): 保护电路和门驱动电路
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申请号: US14394675申请日: 2012-04-19
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公开(公告)号: US20150098160A1公开(公告)日: 2015-04-09
- 发明人: Yuan Gao , Patrice Besse , Thierry Laplagne
- 申请人: Yuan Gao , Patrice Besse , Thierry Laplagne
- 申请人地址: US TX Austin
- 专利权人: Freescale Semiconductor, Inc,
- 当前专利权人: Freescale Semiconductor, Inc,
- 当前专利权人地址: US TX Austin
- 国际申请: PCT/IB2012/001611 WO 20120419
- 主分类号: H02H3/28
- IPC分类号: H02H3/28
摘要:
A protection circuit and a gate driving circuitry. The protection circuit is for protecting a p-type back-to-back MOS switch. The circuit receives an input driving signal and provides a driving output signal to common gates of the p-type back-to-back MOS switch. The circuit comprises a driving signal insulation switch for disconnecting the common gate of the p-type back-to-back MOS switch from the received input driving signal when the voltage of the common gates is larger than the supply voltage of the circuit. The circuit further comprises a gate source coupling switch for coupling a voltage received at the common source of the p-type back-to-back MOS switch to the common gate if a received voltage at the common sources is larger than a reference voltage Vref.
公开/授权文献
- US09413160B2 Protection circuit and a gate driving circuitry 公开/授权日:2016-08-09
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