Invention Application
US20150098891A1 METHOD FOR MANUFACTURING GRAPHENE FILM, GRAPHENE FILM MANUFACTURED BY SAME, ELECTRONIC DEVICE COMPRISING THE GRAPHENE FILM 有权
制造石墨膜的方法,由其制造的石墨膜,包含石墨膜的电子器件

  • Patent Title: METHOD FOR MANUFACTURING GRAPHENE FILM, GRAPHENE FILM MANUFACTURED BY SAME, ELECTRONIC DEVICE COMPRISING THE GRAPHENE FILM
  • Patent Title (中): 制造石墨膜的方法,由其制造的石墨膜,包含石墨膜的电子器件
  • Application No.: US14456550
    Application Date: 2014-08-11
  • Publication No.: US20150098891A1
    Publication Date: 2015-04-09
  • Inventor: Yong Won SONGJae Hyun PARK
  • Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
  • Priority: KR10-2013-0119337 20131007
  • Main IPC: C01B31/04
  • IPC: C01B31/04 C23C16/46 C23C16/26
METHOD FOR MANUFACTURING GRAPHENE FILM, GRAPHENE FILM MANUFACTURED BY SAME, ELECTRONIC DEVICE COMPRISING THE GRAPHENE FILM
Abstract:
A method for manufacturing graphene is provided, comprising (1) introducing a supporting substrate in a reactor; (2) preparing (nano) crystalline alumina catalyst having catalytic activity on the supporting substrate to prepare an insulating substrate; (3) growing nano graphenes on the insulating substrate to manufacture graphene film comprising graphene layer of the nano graphenes, which are grown without use of metal catalyst substantially. The graphene layer composed of the nano graphene has spatially homogeneous structural and electrical properties even in synthesis as large area and can be applied to flexible electronic devices.In addition, as it has easy detachment of the substrate and the graphene film and can detach the graphene film without damage of the substrate, leaving no residual graphene on the substrate, it is possible to grow the nano graphene by reusing the substrate.
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