发明申请
- 专利标题： METHOD OF GROWING NITRIDE SEMICONDUCTOR LAYER AND NITRIDE SEMICONDUCTOR FORMED BY THE SAME
- 专利标题（中）： 生长氮化物半导体层和氮化物半导体的方法
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申请号： US14505181申请日： 2014-10-02
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公开(公告)号： US20150099348A1公开(公告)日： 2015-04-09
- 发明人: Moon-sang LEE , Sung-soo PARK
- 申请人： Samsung Electronics Co., Ltd.
- 优先权： KR10-2013-0119447 20131007
- 主分类号： H01L21/02
- IPC分类号： H01L21/02
摘要：
A method of growing a nitride semiconductor layer includes forming a plurality of nano-structures on a substrate, forming a first buffer layer on the substrate such that upper portions of each of the nano-structures are exposed, removing the nano-structures to form voids in the first buffer layer, and growing a nitride semiconductor layer on the first buffer layer including the voids.
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