A power semiconductor circuit comprising a power semiconductor switch having a control terminal and a first and a second load current terminal, and comprising a drive circuit. The power semiconductor circuit further comprises at least one of three further elements:a temperature-dependent control terminal resistance element which is electrically connected between the drive circuit and the control terminal; and/or a temperature-dependent load current terminal resistance element which is electrically connected between the drive circuit and the second load current terminal; and/or a first current branch which electrically connects the control terminal is to the second load current terminal, wherein a temperature-dependent control load current terminal resistance element is electrically connected into the first current branch. In the event of heating of a power semiconductor switch, the invention reduces the switching losses of the power semiconductor switch.