发明申请
- 专利标题： MOTFT WITH UN-PATTERNED ETCH-STOP
- 专利标题（中）： 具有不间断蚀刻的MOTFT
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申请号： US14081130申请日： 2013-11-15
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公开(公告)号： US20150137113A1公开(公告)日： 2015-05-21
- 发明人: Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
- 申请人： Gang Yu , Chan-Long Shieh , Juergen Musolf , Fatt Foong , Tian Xiao
- 主分类号： H01L29/786
- IPC分类号： H01L29/786 ; H01L29/24 ; H01L21/02 ; H01L29/66
摘要：
A method of fabricating a high mobility semiconductor metal oxide thin film transistor including the steps of depositing a layer of semiconductor metal oxide material, depositing a blanket layer of etch-stop material on the layer of MO material, and patterning a layer of source/drain metal on the blanket layer of etch-stop material including etching the layer of source/drain metal into source/drain terminals positioned to define a channel area in the semiconductor metal oxide layer. The etch-stop material being electrically conductive in a direction perpendicular to the plane of the blanket layer at least under the source/drain terminals to provide electrical contact between each of the source/drain terminals and the layer of semiconductor metal oxide material. The etch-stop material is also chemical robust to protect the layer of semiconductor metal oxide channel material during the etching process.
公开/授权文献
- US09362413B2 MOTFT with un-patterned etch-stop 公开/授权日：2016-06-07
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