发明申请
US20150155037A1 RESISTIVE MEMORY DEVICE CAPABLE OF INCREASING SENSING MARGIN BY CONTROLLING INTERFACE STATES OF CELL TRANSISTORS
有权
通过控制细胞晶体管的界面状态增加感觉损伤的电阻记忆体设备
- 专利标题: RESISTIVE MEMORY DEVICE CAPABLE OF INCREASING SENSING MARGIN BY CONTROLLING INTERFACE STATES OF CELL TRANSISTORS
- 专利标题(中): 通过控制细胞晶体管的界面状态增加感觉损伤的电阻记忆体设备
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申请号: US14337313申请日: 2014-07-22
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公开(公告)号: US20150155037A1公开(公告)日: 2015-06-04
- 发明人: Jae-Kyu Lee , Dae-Won Kim
- 申请人: Jae-Kyu Lee , Dae-Won Kim
- 优先权: KR10-2013-0149391 20131203
- 主分类号: G11C13/00
- IPC分类号: G11C13/00
摘要:
Memory systems can include a memory device having an array of nonvolatile memory cells therein, which is electrically coupled to a plurality of bit lines and a plurality of word lines. The nonvolatile memory cells may include respective nonvolatile resistive devices electrically coupled in series with corresponding cell transistors. A controller is also provided, which may be coupled to the memory device. The controller can be configured to drive the memory device with signals that support dual programming of: (i) the nonvolatile resistive devices; and (ii) interface states within the cell transistors, during operations to write data into the memory device.