Invention Application
- Patent Title: Amorphous Silicon Thin-Film Transistors with Reduced Electrode Contact Resistivity and Methods for Forming the Same
- Patent Title (中): 具有降低电极的非晶硅薄膜晶体管接触电阻率及其形成方法
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Application No.: US14095834Application Date: 2013-12-03
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Publication No.: US20150155368A1Publication Date: 2015-06-04
- Inventor: Khaled Ahmed
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
Embodiments described herein provide amorphous silicon thin-film transistors (a-Si TFTs) and methods for forming a-Si TFTs. A substrate is provided. A gate electrode is formed above the substrate. An a-Si channel layer is formed above the gate electrode. A contact layer is formed above the a-Si channel layer. The contact layer includes titanium, zinc, arsenic, or a combination thereof. A source electrode and a drain electrode are formed above the contact layer.
Public/Granted literature
- US09136355B2 Methods for forming amorphous silicon thin film transistors Public/Granted day:2015-09-15
Information query
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