Invention Application
- Patent Title: SOURCE/DRAIN CONTACTS FOR NON-PLANAR TRANSISTORS
- Patent Title (中): 非平面晶体管的源/漏联系
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Application No.: US14618414Application Date: 2015-02-10
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Publication No.: US20150155385A1Publication Date: 2015-06-04
- Inventor: Sameer S. Pradhan , Subhash M. Joshi , Jin-Sung Chun
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: INTEL CORPORATION
- Current Assignee: INTEL CORPORATION
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/45 ; H01L21/3205 ; H01L29/16 ; H01L21/02 ; H01L21/283 ; H01L29/66 ; H01L29/417
Abstract:
The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.
Public/Granted literature
- US09853156B2 Source/drain contacts for non-planar transistors Public/Granted day:2017-12-26
Information query
IPC分类:
