发明申请
US20150179509A1 Plasma Treatment of Low-K Surface to Improve Barrier Deposition
有权
低K表面的等离子体处理提高了阻挡层沉积
- 专利标题： Plasma Treatment of Low-K Surface to Improve Barrier Deposition
- 专利标题（中）： 低K表面的等离子体处理提高了阻挡层沉积
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申请号： US14135182申请日： 2013-12-19
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公开(公告)号： US20150179509A1公开(公告)日： 2015-06-25
- 发明人: Ratsamee Limdulpaiboon , Frank Greer , Chi-I Lang , J. Watanabe , Wenxian Zhu
- 申请人： Intermolecular, Inc.
- 申请人地址： US CA San Jose
- 专利权人： Intermolecular, Inc.
- 当前专利权人： Intermolecular, Inc.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/02
摘要：
Methods and apparatus for processing using a remote plasma source are disclosed. The apparatus includes an outer chamber enclosing a substrate support, a remote plasma source, and a showerhead. A substrate heater can be mounted in the substrate support. A transport system moves the substrate support and is capable of positioning the substrate. The plasma system may be used to generate activated species. The activated species can be used to treat the surfaces of low-k and/or ultra low-k dielectric materials to facilitate improved deposition of diffusion barrier materials.
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