发明申请
- 专利标题: Apparatus and method of direct writing with photons beyond the diffraction limit using two-color resist
- 专利标题(中): 使用双色光刻胶直接写入光子超过衍射极限的装置和方法
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申请号: US14244942申请日: 2014-04-04
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公开(公告)号: US20150185617A1公开(公告)日: 2015-07-02
- 发明人: David A. Markle , John S. Petersen
- 申请人: David A. Markle , John S. Petersen
- 申请人地址: US CA Los Gatos
- 专利权人: Periodic Structures, Inc.
- 当前专利权人: Periodic Structures, Inc.
- 当前专利权人地址: US CA Los Gatos
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
Methods of and apparatus for performing direct-write lithography in a two-color photoresist layer are disclosed. The method includes exposing the two-color photoresist layer with transducer and inhibition images that respectively define bright spots and dark spots. The transducer image generates excited-state photo-molecules while the inhibition image converts the exited-state photo-molecules to an unexcited state that is not susceptible to conversion to an irreversible exposed state. The dark spots and bright spots are aligned, with the dark spots being smaller than the bright spots so that a portion of the excited-state photo-molecules adjacent the periphery of the bright spots absorb the inhibition radiation and transition to the unexcited state while a portion of the excited photo-molecules at the center of bright spots are not exposed to the inhibition light and transition to an irreversible exposed state. This forms in the two-color photoresist layer a pattern of sub-resolution photoresist pixels.
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