发明申请
US20150192611A1 SEMICONDUCTOR PROBE, TESTING DEVICE AND TESTING METHOD FOR TESTING QUANTUM BATTERY
有权
半导体探头,测试装置和测试量子电池的测试方法
- 专利标题: SEMICONDUCTOR PROBE, TESTING DEVICE AND TESTING METHOD FOR TESTING QUANTUM BATTERY
- 专利标题(中): 半导体探头,测试装置和测试量子电池的测试方法
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申请号: US14404803申请日: 2012-05-31
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公开(公告)号: US20150192611A1公开(公告)日: 2015-07-09
- 发明人: Harutada Dewa , Kiyoyasu Hiwada , Akira Nakazawa
- 申请人: Harutada Dewa , Kiyoyasu Hiwada , Akira Nakazawa
- 申请人地址: JP Kobe-shi, Hyogo JP Musashino-shi, Tokyo
- 专利权人: GUALA TECHNOLOGY CO., LTD.,KABUSHIKI KAISHA NIHON MICRONICS
- 当前专利权人: GUALA TECHNOLOGY CO., LTD.,KABUSHIKI KAISHA NIHON MICRONICS
- 当前专利权人地址: JP Kobe-shi, Hyogo JP Musashino-shi, Tokyo
- 国际申请: PCT/JP2012/064232 WO 20120531
- 主分类号: G01R1/067
- IPC分类号: G01R1/067 ; G01R31/36
摘要:
A testing device and method of a quantum battery by a semiconductor probe capable of evaluating electric characteristics of a charge layer in the middle of a production process of the quantum battery without damaging the charge layer. On semiconductor probe constituted by stacking electrode and metal oxide semiconductor on support body, and probe charge layer is formed of the same material as that of quantum battery and irradiated with ultraviolet rays. Forming probe charge layer of same material as that of quantum battery on semiconductor probe enables evaluation without damaging charge layer of the quantum battery. Testing device and method are provided which measure the charge/discharge characteristics of a charge layer in the middle of producing the quantum battery by a voltmeter and a constant current source or a discharge resistor by using the semiconductor probe including the probe charge layer.
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