Invention Application
US20150200212A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME 有权
薄膜晶体管阵列及其制造方法

THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME
Abstract:
A thin film transistor array panel is provided as follows. A gate electrode is disposed on a substrate. A semiconductor layer is disposed on the gate electrode. A gate insulating layer is disposed between the gate electrode and the semiconductor layer. A source electrode is disposed on a first side of the semiconductor layer, having a first lateral surface. A drain electrode is disposed on a second side of the semiconductor layer, having a second lateral surface. The first and second lateral surfaces define a spacing which overlaps the gate electrode. A metal silicide layer is disposed on the first and second lateral surfaces. A passivation layer is disposed on the metal silicide layer, the source electrode and the drain electrode. The passivation layer is not in contact with the first and second lateral surfaces.
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