Invention Application
- Patent Title: Anti-Reflection Layer For Back-Illuminated Sensor
- Patent Title (中): 背照射传感器防反射层
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Application No.: US14591325Application Date: 2015-01-07
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Publication No.: US20150200216A1Publication Date: 2015-07-16
- Inventor: Masaharu Muramatsu , Hisanori Suzuki , Yasuhito Yoneta , Shinya Otsuka , Jehn-Huar Chem , David L. Brown , Yung-Ho Alex Chuang , John Fielden , Venkatraman Iyer
- Applicant: KLA-Tencor Corporation , Hamamatsu Photonics K.K.
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An image sensor for short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. An anti-reflection or protective layer is formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.
Public/Granted literature
- US09748294B2 Anti-reflection layer for back-illuminated sensor Public/Granted day:2017-08-29
Information query
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