发明申请
- 专利标题： NORMALLY-OFF JUNCTION FIELD-EFFECT TRANSISTORS AND APPLICATION TO COMPLEMENTARY CIRCUITS
- 专利标题（中）： 正常关闭场效应晶体管和应用于补充电路
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申请号： US14591022申请日： 2015-01-07
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公开(公告)号： US20150206947A1公开(公告)日： 2015-07-23
- 发明人: Bahman Hekmatshoartabari , Ghavam G. Shahidi
- 申请人： International Business Machines Corporation
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/16 ; H01L27/06 ; H01L29/808 ; H01L29/812
摘要：
A junction field-effect transistor (JFET) with a gate region that includes two separate sub-regions having material of different conductivity types and/or a Schottky junction that substantially suppresses gate current when the gate junction is forward-biased, as well as complementary circuits that incorporate such JFET devices.
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